Thermal performance of GaInSb quantum well lasers for silicon photonics applications

A key component for the realization of silicon-photonics is an integrated laser operating in important communication band near 1.55 μm. One approach through use GaSb-based alloys, which may be grown directly on silicon. In this study, silicon-compatible strained Ga0.8In0.2Sb/Al0.68In0.32Sb composite quantum well (CQW) lasers GaSb substrates emitting at μm have been developed and investigated terms their thermal performance. Variable temperature high-pressure techniques were used to investigate influence device design These measurements show that dependence devices dominated by carrier leakage from QW region Xb minima Al0.35Ga0.65As0.03Sb0.97 barrier layers accounting up 43% threshold current room temperature. Improvement performance possible refinements CQW design, while confinement improved optimization layer composition. This investigation provides valuable insights monolithic integration